STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest ...

Most gate drive transformers are used with high-speed switching devices such as field effect transistor (FET) and insulated gate bipolar transistor (IGBT) electronics. Pulse transformers are gate ...

Insulated gate bipolar transistors (IGBTs ... Consequently, IGBTs provide faster speeds and better drive and output characteristics than power BJTs and offer higher current densities than equivalent ...

Infineon’s CoolSiC MOSFET and silicon IGBT EDT3 technologies support a single or dual gate driver, facilitating the transition from full silicon or full SiC inverters to fusion inverters.

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...

Mouser now stocks Infineon Technologies' HybridPACK Drive G2 modules. These modules build on the HybridPACK Drive G1, providing higher power density while maintaining the same compact module size. The ...