X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...

Intel is claiming record performance and leakage for an NMOS device with its ‘trigate’ transistor. Also at the VLSI Symposia IBM Microelectronics said it could scale vertical transistors in DRAM to ...

Toshiba Corporation today announced that it has developed a new flip-flop circuit using 40nm CMOS process that will reduce power consumption in mobile equipment. Measured data verifies that the power ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

Texas Instruments (TI) introduced the industry's first seven-channel, NMOS low-side driver, replacing standard Darlington transistor arrays with a power-efficient, drop-in compatible integrated ...

CISSOID has introduced a dual High Temperature 40V N-channel MOSFET Transistor. CISSOID introduced a dual High Temperature 40V N-channel MOSFET Transistor. Available in the small footprint, surface ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. Before CMOS, there was NMOS (also PMOS, but I have ...