The company considered using Intel Custom Foundry (ICF) and Texas Instruments but quickly realized the ICF was not tailored ...

At the same time, TSMC is aggressively developing its 2nm node, expected to start production by 2025, using GAA technology, which provides better power efficiency and performance than FinFET.

Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, ...

According to the roadmap and on TSMC's 2nm logic section of its website ... The addition of the GAA transistor technology marks a departure from the FinFET designs that have dominated process ...

TSMC is continuing to back the 7nm FinFET (Fin Field Effect Transistor) process for 5nm - essentially a "3D" non-planar transistor that, literally, resembles a fin, hence the name. However ...

GeForce driver support future uncertain Tom’s Hardware has noticed that Nvidia's release notes for CUDA 12.8 show Maxwell, ...

Hsinchu, Taiwan and Cambridge, UK – September 30, 2014 – TSMC and ARM® today announced the results from a key FinFET silicon validation of the ARM big.LITTLE TM implementation, using ARM Cortex®-A57 ...

Nvidia's CUDA 12.8 release notes indicate that support for the older architectures is now considered "feature-complete" and ...

After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive technologies improve electrical performance and miniaturization to fit as many ...

U.S. government wants to prohibit shipments of all advanced chips with over 30 billion transistors to China to everyone ...

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