Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

The 2023-24 achievements of the UK's Compound Semiconductor Applications (CSA) Catapult have been published in its annual ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, and the distributor Astute ...

X-FAB Silicon Foundries has launched XSICM03, its next-generation XbloX platform, advancing SiC process technology for power ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

Researchers from University of Science and Technology of China (USTC) have developed a 2 kV/0.45 mΩ·cm vertical GaN PiN diode ...

Mona Neubaur, Minister for Economic Affairs of the State of North Rhine-Westphalia, Germany, has opened Aixtron's new ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...