Today, we’re exploring Mears Silicon Technology (MST), Atomera’s innovative solution for improving the performance and efficiency of silicon-based devices. MST has the potential to transform power ...

Design Consideration of Totem Pole PFC Why SiC-MOSFET is needed in Totem Pole PFC design As Figure 2 shows, Totem Pole PFC can be considered a synchronous-rectified boost DCDC converter. (A DCDC boost ...

PowerUP 2024 connects power electronics experts to discuss innovations, sustainable energy,power systems with keynotes, panels, and resources ...

The PCIM Europe 2024 conference, a premier event for power electronics and intelligent motion technology, showcased groundbreaking innovations and strategic insights from industry leaders. With a ...

As the industry evolves, GaN and SiC technologies are becoming more prominent and finding their places within the semiconductor landscape.

Power Electronics News Compares The Differences Between Silicon Carbide (SiC) vs. Gallium Nitride (GaN) Transistors and MOSFETs. Visit To Learn More.

Electric motors are the beating heart of sustainable mobility. They play a fundamental role in transforming the automotive industry and beyond. With the increasing adoption of EVs and a growing focus ...

Achieving sustainability in semiconductor manufacturing paves the way for an eco-friendlier technology sector.

The easy-to-use thermal calculator tool from EPC provides quick estimates for the thermal performance of PCB-mounted GaN devices.

Learn About Class D Power Amplifier Circuit Design (with Diagrams), Schematics, and Efficiency. Plus, See How It Compares to an AB Amp. Visit Today!

Wide bandgap (WBG) semiconductors offer important advantages in terms of reliability, energy efficiency, power density, and cost reduction.

Aehr Test Systems disclosed an initial order for a FOX-NP wafer-level test and burn-in system intended for GaN power devices.