A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state.

In this work, we present a 38 GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push ...