Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann’s Tyranny. The reduction of ...

This work presents dose rate and neutron testing on a ferroelectric random-access memory (FRAM) device in dynamic operation during radiation pulses. Radiation failure modes are shown to be unique.

In this article, the effect of various localization rules in a ferroelectric multiscale model is studied. Ferroelectric materials are highly heterogeneous materials, which means local fields vary from ...