Figure 3 GaNSlim design comprises three basic building blocks: FET switch, gate driver IC, and thermally enhanced DPAK package. Source: Navitas There are three basic building blocks of a GaNSlim ...

Some of the key components of the LiDAR reference design in Figure 5 include a pulse-shortening buffer that creates nanosecond pulse widths, an LMG1020 GaN FET gate driver that drives a GaN FET to ...

STAR2040 is a CMOS cascode driver circuit designed for use with high-current GaN (or SiC) power FET devices ... monitoring capability for the drain, gate, and source nodes. Because of its high current ...

GaN power transistors (labelled “GaN” in figure) are the latest and fastest power devices to emerge on the market. GaN devices won the Google Littlebox Challenge, because their sub-10ns switching ...

Infineon Technologies AG  has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect ...

Infineon Technologies is launching the new MOTIX™ TLE9189 gate driver IC for safety-critical applications for 12 V brushless ...

ICeGaN™ gate technology – makes the product compatible with Si MOSFET, SiC and IGBT gate drivers. It also provides a wide gate ... offers numerous gate drive connection options, simplifying the design ...

With the introduction of this new three-phase gate driver IC, Infineon aims to address the increasing demand for motor ...

Allegro Microsystems Inc (ALGM) navigates significant design wins and market challenges, with a focus on growth and ...

This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon ...

“The high reliability of the motor control design enabled by our new device is particularly important for safety-critical by-wire solutions.” The MOTIX TLE9189 gate driver IC will be available in two ...