IGBT 7 devices from Microchip offer power system designers a wide selection of current and voltage ranges, topologies, and package types.

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

In addition to these features, the devices achieve an industry-leading short-circuit withstand time of 10 microseconds (Tj=25 deg C), together with low switching and conduction losses while ...

Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low ...