The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor switch used to control electrical energy. It combines the characteristics of both bipolar junction transistors (BJT ...
Infineon’s CoolSiC MOSFET and silicon IGBT EDT3 technologies support a single or dual gate driver, facilitating the transition from full silicon or full SiC inverters to fusion inverters.
Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback