STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...

these gate drivers ensure greater reliability and protection for silicon-carbide (SiC) MOSFETs and insulated-gate bipolar transistor (IGBT) power switches. The product is ideal for engineers, OEMs, ...

STMicroelectronics’ STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible ...

Although they’re usually chosen second, after the selection of a specific load device such as a transformer, power switch (e.g., MOSFET or IGBT), or cable, the right driver can make the ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...

The STGAP3S family of gate drivers from STMicroelectronics for silicon-carbide (SiC) and IGBT power switches integrates advanced galvanic isolation technology, enhanced desaturation protection, and a ...