Promotion of this symphony of semiconductors came from many of the speakers at the IEEE Workshop on Wide Bandgap Power ...

Nexperia has introduced a new series of high-performance gate driver ICs for driving high and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. These devices produce high ...

According to Infineon, these wafers—the thinnest of its type to be mass-produced—will enhance the efficiency, density, and reliability of its power converters.

Intel has quietly removed the DLVR bypass "Power Gate" mode for Arrow Lake CPUs in its latest 0x112 microcode.

Panjit International, a Taiwanese MOSFET and silicon carbide (SiC) diode supplier, is working to expand its footprint in ...

Infineon’s new OptiMOS 5 Linear FET 2 MOSFET enhances safe hot-swap operations in AI servers and telecom with improved SOA, ...

Toshiba Electronics Europe GmbH has partnered with MIKROE to integrate its robust TB9083FTG gate-driver IC into the Brushless 30 Click, a compact add-on board for precise and reliable control of BLDC ...

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles ...

Mitsubishi Electric is ready to ship samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Nexperia has introduced a 110V 4A half-bridge gate driver IC. "NGD4300 has been designed for use with dc-dc converters in ...