Moreover, the product employs oblique ion implantation, reducing switching loss. According to Mitsubishi Electric, the MOSFET-based wide bandgap component finds applications in drive-motor inverters ...
Trench technology reduces power loss by about 50 percent compared to conventional planar SiC-MOSFETs Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in ...
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