Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

The 2023-24 achievements of the UK's Compound Semiconductor Applications (CSA) Catapult have been published in its annual ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, and the distributor Astute ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

X-FAB Silicon Foundries has launched XSICM03, its next-generation XbloX platform, advancing SiC process technology for power ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

Mona Neubaur, Minister for Economic Affairs of the State of North Rhine-Westphalia, Germany, has opened Aixtron's new ...

Researchers from University of Science and Technology of China (USTC) have developed a 2 kV/0.45 mΩ·cm vertical GaN PiN diode ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...