Sales of ferroelectric RAM are increasing due to the rising demand for High-Endurance Non-Volatile Memory. FRAM is a high-endurance non-volatile memory that can withstand a large number of read ...

DALLAS, Texas — Texas Instruments Inc. is jumping into the next-generation universal memory fray with hard-hitting support for ferroelectric RAM, heralding its suitability as a replacement for ...

A new ferroelectric RAM (FRAM) memory chip claims to overcome the two main challenges confronted by space designs: radiation and limited power. Infineon Technologies LLC, part of Infineon Technologies ...

A ferroelectric random-access memory (RAM), or FRAM, stands for a RAM that allows faster read-and-write access of dynamic RAM. It contains a thin ferroelectric film made of lead zirconate titanate ...

The global ferroelectric RAM market grew at a CAGR of around 20% during 2014-2019. Looking forward, the global ferroelectric RAM market to continue its strong growth during the next five years.

Although not as prevalent as Flash memory storage, ferroelectric RAM (FeRAM) offers a range of benefits over the former, mostly in terms of endurance and durability, which makes it popular for a ra… ...

Ferroelectric random access memory (FRAM) combines the benefits of DRAM, ROM and flash memory. Faster read and write access is the key benefit FRAM. Higher memory retention is also a key advantage ...

The FM20L08, a 1-Mbit (128 kwords by 8 bits) nonvolatile ferroelectric RAM (FRAM), can operate at supply levels of 3.3 V. Housed in a 32-lead TSOP package, the chip has a read access time of 60 ns ...

In the late 1990s, after more than a decade of ferroelectric-memory development, several companies succeeded in the high-volume production of low-density (less than 1-Mbit) ferroelectric RAM. These ...

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility.