STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide ... the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and ...

These gate drivers are ideal for a range of power and energy applications, including power-factor correction (PFC) circuits, DC/DC converters ... select the optimal driver for their specific SiC or ...

The isolated gate drivers target industrial and energy ... specifications of their selected SiC MOSFET or IGBT power switches. The Desaturation protection feature provides overload and short-circuit ...

Advanced galvanically isolated gate drivers feature flexible protection ... the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and ...

Promotion of this symphony of semiconductors came from many of the speakers at the IEEE Workshop on Wide Bandgap Power ...

Although they’re usually chosen second, after the selection of a specific load device such as a transformer, power switch (e.g., MOSFET or IGBT ... and a gate-drive circuit that produces ...

Input 220VAV voltage, drive the motor 800W output ... We found that in the voltage re-entry, UCC28180 gate pin output pwm wave duty cycle is very high, the DS current of the IGBT in the PFC startup ...

Vishay Intertechnology, Inc. has introduced two new insulated-gate bipolar transistor (IGBT) and mixed-oxide semiconductor field-effect transistor (MOSFET) drivers in the compact ... LED optically ...

Power Integrations’ gallium-nitride power-conversion devices rated for 1,700 V marks yet another incursion on markets that, ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...