Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) ...

Nexperia has introduced a new series of high-performance gate driver ICs for driving high and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. These devices produce high ...

Littelfuse, Inc. has announced the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles ...

Promotion of this symphony of semiconductors came from many of the speakers at the IEEE Workshop on Wide Bandgap Power ...

According to Infineon, these wafers—the thinnest of its type to be mass-produced—will enhance the efficiency, density, and reliability of its power converters.

Nexperia introduces the advanced gate driver series specifically designed for automotive and industrial applications.

Mitsubishi Electric is ready to ship samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Abstract: SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to ... By reviewing the gate drive pattern, gate drive hardware, ...